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BCP29 View Datasheet(PDF) - Diotec Semiconductor Germany

Part Name
Description
View to exact match
BCP29
Diotec
Diotec Semiconductor Germany  Diotec
BCP29 Datasheet PDF : 2 Pages
1 2
Darlington Transistors
BCP 29, BCP 49
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
IC = 100 mA, IB = 0.1 mA
VCEsat
Base saturation voltage – Basis-Sättigungsspannung 1)
1V
IC = 100 mA, IB = 0.1 mA
VBEsat
DC current gain – Kollektor-Basis-Stromverhältnis 1)
1.5 V
VCE = 1 V, IC = 0.1 mA
BCP 29 hFE
4000
BCP 49 hFE
2000
VCE = 5 V, IC = 10 mA
BCP 29 hFE
10000
BCP 49 hFE
4000
VCE = 5 V, IC = 100 mA
BCP 29 hFE
BCP 49 hFE
20000
10000
VCE = 5 V, IC = 500 mA
BCP 29 hFE
BCP 49 hFE
4000
2000
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 50 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
200 MHz
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
6.5 pF
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
junction to soldering point – Sperrschicht zu Lötpad
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
RthA
93 K/W 2)
RthS
17 K/W
BCP 28, BCP 48
Pinning – Anschlußbelegung
4=2
1
2
3
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
5
 

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