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CXT5551 View Datasheet(PDF) - Galaxy Semi-Conductor

Part NameDescriptionManufacturer
CXT5551 NPN Silicon Epitaxial Planar Transistor BILIN
Galaxy Semi-Conductor BILIN
CXT5551 Datasheet PDF : 4 Pages
1 2 3 4
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Switching and amplification in high voltage.
z Low current(max. 600mA)
z High voltage (max. 180V)
Pb
Lead-free
Production specification
CXT5551
APPLICATIONS
z High voltage amplifier application.
ORDERING INFORMATION
Type No.
Marking
CXT5551
1G6
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj,Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal resistance
Junction and Storage Temperature
180
160
6
600
0.625
250
-65 to +150
Units
V
V
V
mA
W
/W
E059
Rev.A
www.gmicroelec.com
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