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IRFP350A View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
IRFP350A Advanced Power MOSFET Fairchild
Fairchild Semiconductor Fairchild
IRFP350A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics
VGS
Top : 15V
10 V
8.0 V
7.0 V
101
6.0 V
5.5 V
5.0 V
Bottom : 4.5V
100
10-110-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100
101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.60
0.45
VGS = 10 V
0.30
0.15
0.00
0
VGS = 20 V
@ Note : TJ = 25 oC
10
20
30
40
50
60
70
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
4000
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
3000
C iss
2000
C oss
1000
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100
101
VDS , Drain-Source Voltage [V]
IRFP350A
Fig 2. Transfer Characteristics
101
150 oC
100
25 oC
10-1
2
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 50 V
3. 250 µs Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
101
100
10-1
0.2
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 80 V
10
VDS = 200 V
VDS = 320 V
5
@ Notes : ID = 17.0 A
0
0
20
40
60
80
100
120
QG , Total Gate Charge [nC]
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