FQAF22P10 View Datasheet(PDF) - Fairchild Semiconductor
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FQAF22P10 Datasheet PDF : 8 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1. V =0V
2.
I
GS
=
-250 μ
A
D
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
102
is Limited by R DS(on)
100 µs
1 ms
101
10 ms
DC
100
10-1
100
※ Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
101
102
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = -10 V
2. ID = -11 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
20
16
12
8
4
0
25
50
75
100
125
150
175
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
10 0 D = 0 .5
1 0 -1
0 .2
0 .1
0 .05
0 .02
0 .01
sin g le p u ls e
※ N o tes :
1.
Zθ
(t)
JC
=
2 .1
℃ /W
M ax.
2 . D uty F acto r, D = t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
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