2SC2814 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
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2SC2814 Datasheet PDF : 5 Pages
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Ordering number : ENN693F
2SC2814
NPN Epitaxial Planar Silicon Transistors
High-Friquency General-Purpose
Amplifier Applications
Features
· Ultrasmall package enabiling compactness and
slimness of sets.
· High fT and small cre (fT=320MHz typ, cre=0.95pF
typ).
Package Dimensions
unit:mm
2018B
[2SC2814]
0.4
3
0.16
0 to 0.1
1 0.95 0.95 2
1.9
2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Reverse Transfer Capacitance
Base-to-Collector Time Constant
Noise Figure
Power Gain
ICBO
IEBO
hFE
fT
Cre
rbb'CC
NF
PG
* : The 2SC2814 are classified as follows by hFE at 1mA :
(Note) Marking : F
hFE rank : 2, 3, 4, 5
Conditions
Conditions
VCB=10V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VCB=6V, f=1MHz
VCE=6V, IC=1mA, f=31.9MHz
VCE=6V, IC=1mA, f=100MHz
VCE=6V, IC=1mA, f=100MHz
Rank
hFE
2
40 to 80
3
60 to 120
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Ratings
Unit
30 V
20 V
5V
30 mA
150 mW
125 ˚C
–55 to +125 ˚C
Ratings
min
typ
40*
200 320
0.7 0.95
12
3.0
25
max
0.1
0.1
270*
1.2
20
Unit
μA
μA
MHz
pF
ps
dB
dB
4
5
90 to 180 135 to 270
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
Publication Order Number:
2SC2814/D
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