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FDS3670 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FDS3670
Fairchild
Fairchild Semiconductor Fairchild
FDS3670 Datasheet PDF : 5 Pages
1 2 3 4 5
Typical Characteristics
10
ID = 25A
8
6
VDS = 20V
50V
80V
4
2
0
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
20
40
60
80
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
0.1 SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 9. Maximum Safe Operating Area.
50
SINGLE PULSE
40
RθJA = 125oC/W
TA = 25oC
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
S in gle Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t 1, TI ME (s e c)
R θJA (t) = r(t) * R θJA
R θJA = 125°C/ W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
D u t y C y c l e, D = t 1 /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS3670 Rev C(W)
 

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