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FDS3670 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FDS3670 100V N-Channel PowerTrench MOSFET Fairchild
Fairchild Semiconductor Fairchild
FDS3670 Datasheet PDF : 5 Pages
1 2 3 4 5
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Typical Characteristics
60
VGS = 10V 5.0V
4.5V
50
5.5V
40
30
4.0V
20
10
0
0
3.5V
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS = 4.0V
4.5V
5.0V
5.5V 7.0V
10V
10
20
30
40
50
60
ID, DIRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.2
2
ID = 7.2A
VGS = 10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
0.06
0.05
0.04
0.03
0.02
0.01
0
3
ID = 3.6A
TA = 125oC
TA = 25oC
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
60
VDS = 5V
50
40
30
20
10
0
2
125oC
25oC
TA = -55oC
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
6
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS3670 Rev C(W)
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