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K2983-ZJ-E2 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
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K2983-ZJ-E2 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
RDS(on)1
RDS(on)2
VGS(off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 15 A
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 15 A
VDS = 30 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V
VGS = 0 V
f = 1 MHz
ID = 15 A
VGS(on) = 10 V
VDD = 15 V
RG = 10
ID = 30 A
VDD = 24 V
VGS = 10 V
IF = 30 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 30 A, VGS = 0 V
Qrr
di/dt = 100 A /µS
2SK2983
MIN. TYP. MAX. UNIT
13.0 20.0 m
18.0 27.0 m
1.0 1.5 2.0 V
9.0 19
S
10 µ A
±10 µ A
1200
pF
530
pF
250
pF
50
ns
820
ns
100
ns
170
ns
30
nC
4.5
nC
7.5
nC
0.8
V
35
ns
65
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG. RG = 10
VGS
0
τ
τ = 1µ s
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
VGS(on)
ID
90 %
ID
Wave Form
0 10 %
td(on)
ID
tr
td(off)
90 %
90 %
10 %
tf
ton
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50
VDD
2
 

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