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K2983-ZJ-E1 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
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K2983-ZJ-E1 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2983
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
FEATURES
Low on-resistance
RDS(on)1 = 20 mΩ (MAX.) (VGS = 10 V, ID = 15 A)
RDS(on)2 = 27 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A)
Low Ciss Ciss = 1200 pF TYP.
Built-in gate protection diode
ORDERING INFOMATION
PART NUMBER
2SK2983
2SK2983-S
2SK2983-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source VoltageNote1
Gate to Source VoltageNote2
VDSS
VGSS
30
V
±20
V
Drain Current (DC)
Drain Current (pulse)Note3
ID(DC)
ID(pulse)
±30
A
±120
A
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Total Power Dissipation (TC = 25°C)
PT
50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150 °C
Notes1. VGS = 0 V
2. VDS = 0 V
3. PW 10 µ s, Duty Cycle 1 %
.
The information in this document is subject to change without notice.
Document No. D12357EJ1V0DS00 (1st edition)
Date Published October 1998 NS CP (K)
Printed in Japan
©
1998
 

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