GS1MG View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
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GS1MG Datasheet PDF : 3 Pages
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GS1M
DIODE
ABSOLUTE MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Reverse Voltage
RMS Voltage
VRRM
1000
V
VRMS
700
V
DC Blocking Voltage
VDC
1000
V
Average Forward Rectified Current at TL=110°C
IO
1.0
A
Peak Forward Surge Current 8.3ms Single Half
Sine-Wave Superimposed on Rated Load
(JEDEC Method)
IFSM
30.0
A
Junction Temperature
TJ
-65~+175
°C
Storage Temperature
TSTG
-65~+175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 2)
ELECTRICAL CHARACTERISTICS
SYMBOL
θJA
RATINGS
75
UNIT
°C/W
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
Instantaneous Forward Voltage
VF
IF=1.0A
DC Reverse Current at Rated DC Blocking
Voltage
IR
TA=25°C
TA=100°C
Junction Capacitance (Note 1)
CJ
15.0
Notes: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas.
MAX
1.1
5.0
50.0
UNIT
V
μA
μA
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-217.B
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