FQD8P10TM View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
FQD8P10TM Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Part Number
FQD8P10TM
FQU8P10TU
Top Mark
FQD8P10
FQU8P10
Package
D-PAK
I-PAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
16 mm
N/A
Quantity
2500 units
70 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min Typ
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 A
-100 --
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = -250 A, Referenced to 25°C --
-0.1
IDSS
Zero Gate Voltage Drain Current
VDS = -100 V, VGS = 0 V
VDS = -80 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V
--
--
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
VDS = VGS, ID = -250 A
VGS = -10 V, ID = -3.3 A
-2.0 --
-- 0.41
gFS
Forward Transconductance
VDS = -40 V, ID = -3.3 A
--
4.1
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 360
-- 120
--
30
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -50 V, ID = -8.0 A,
RG = 25
--
11
-- 110
--
20
(Note 4)
--
35
VDS = -80 V, ID = -8.0 A,
--
12
VGS = -10 V
--
3.0
(Note 4)
--
6.4
Max
--
--
-1
-10
-100
100
-4.0
0.53
--
470
155
40
30
230
50
80
15
--
--
Unit
V
V/°C
A
A
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -6.6 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -8.0 A,
dIF / dt = 100 A/s
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 5.2 mH, IAS = -6.6 A, VDD = -25 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ -8.0 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
--
--
-6.6
A
--
-- -26.4 A
--
--
-4.0
V
--
98
--
ns
-- 0.35 --
C
©2010 Fairchild Semiconductor Corporation
2
FQD8P10 / FQU8P10 Rev. C2
www.fairchildsemi.com
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