datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

FQD5P20 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD5P20 200V P-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQD5P20 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -200 V, VGS = 0 V
VDS = -160 V, TC = 125°C
VGS = -30 V, VDS = 0 V
VGS = 30 V, VDS = 0 V
-200
--
--
--
--
--
--
-0.17
--
--
--
--
--
--
-1
-10
-100
100
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA
-3.0 --
-5.0
VGS = -10V, ID = -1.85 A
-- 1.1 1.4
VDS = -40 V, ID = -1.85 A (Note 4)
--
2.2
--
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 330 430
--
75
98
--
12
15
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -100 V, ID = -4.8 A,
--
RG = 25
--
--
(Note 4, 5)
--
VDS = -160 V, ID = -4.8 A,
--
VGS = -10 V
--
(Note 4, 5)
--
9
28
70 150
12
35
25
60
10
13
2.8
--
5.2
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-3.7
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
-- -14.8
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -3.7 A
--
--
-5.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -4.8 A,
-- 175
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
1.07
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 36.2mH, IAS = -3.7A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -4.8A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2008 Fairchild Semiconductor Internationa
Rev. A1, October 2008
Direct download click here
 

Share Link : Fairchild
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]