2SA1776_REVA View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
View to exact match
2SA1776_REVA Datasheet PDF : 4 Pages
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Transistors
2SA1812 / 2SA1727 / 2SA1776
High-voltage Switching Transistor
( 400V, 0.5A)
2SA1812 / 2SA1727 / 2SA1776
Features
1) High breakdown voltage, BVCEO= 400V.
2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB =
3) High switching speed, typically tf : 1 s at IC = 100mA.
4) Wide SOA (safe operating area).
100mA /
10mA.
Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SA1812
2SA1727
2SA1776
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
400
400
7
0.5
1.0
0.5
2
1
10
1
150
55 to +150
1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board.
3 When t = 1.7mm and the foil collector area on the PC board is 1cm2 or greater.
Unit
V
V
V
A (DC)
A (Pulse) 1
W
W
2
W
W (Tc 25°C)
W
3
°C
°C
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
2SA1812
MPT3
PQ
AJ
T100
3000
Denotes hFE
2SA1727
CPT3
PQ
TL
3000
2SA1776
ATV
PQ
TV2
2500
Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current tranfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
Min.
400
400
7
82
Typ.
150
12
18
0.6
2.7
1
Max.
10
10
270
1
1.2
Unit
V
V
V
A
A
V
V
MHz
pF
s
s
s
Conditions
IC 50 A
IC 1mA
IE 50 A
VCB 400V
VEB 6V
VCE 5V , IC 50mA
IC/IB 100mA / 10mA
IC/IB 100mA / 10mA
VCB 5V , IE 50mA , f 5MHz
VCE 10V , IE 0A , f 1MHz
IC 100mA, RL 1.5k
IB1 IB2 10mA
VCC to 150V
Rev.A
1/3
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