B1182_09 View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

View to exact match

B1182_09

Medium power transistor (-32V, -2A)

ROHM Semiconductor 

2SB1188 / 2SB1182 / 2SB1240

Electrical characteristics (Ta=25C)

Parameter

Symbol Min.

Collector-base breakdown voltage BVCBO −40

Collector-emitter breakdown voltage BVCEO −32

Emitter-base breakdown voltage

BVEBO

−5

Collector cutoff current

ICBO

−

Emitter cutoff current

IEBO

−

Collector-emitter saturation voltage VCE(sat) −

DC current transfer ratio

hFE

120

Transition frequency

fT

−

Output capacitance

∗ Measured using pulse current.

Cob

−

Typ.

−

−

−

−

−

−0.5

−

100

50

Max.

−

−

−

−1

−1

−0.8

390

−

−

Unit

V

V

V

μA

μA

V

−

MHz

pF

Conditions

IC= −50μA

IC= −1mA

IE= −50μA

VCB= −20V

VEB= −4V

IC/IB= −2A/ −0.2A

∗

VCE= −3V, IC= −0.5A

∗

VCE= −5V, IE=0.5A, f=100MHz

VCB= −10V, IE=0A, f=1MHz

Packaging specifications and hFE

Package

Type

2SB1188

2SB1182

2SB1240

Code

hFE Basic ordering unit (pieces)

QR

QR

QR

hFE values are classified as follows :

Item

Q

R

hFE

120 to 270 180 to 390

T100

1000

−

−

Taping

TL

2500

−

−

TV2

2500

−

−

Data Sheet

Electrical characteristic curves

−1000 Ta=100°C

−500

25°C

−40°C

−200

−100

−50

VCE= −3V

−20

−10

−5

−2

−1

0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.1 Grounded emitter propagation

characteristics

−0.5

Ta=25°C −2.5mA

−0.4

−0.3

−0.2

−2.25mA

−2mA

−1.75mA

−1.5mA

−1.25mA

−1mA

−750μA

−500μA

−0.1

−250μA

0

IB=0A

0

−0.4 −0.8 −1.2 −1.6

−2

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.2 Grounded emitter output

characteristics

500

Ta=25°C

VCE= −6V

−3V

−1V

200

100

50

20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000

COLLECTOR CURRENT : IC (mA)

Fig.3 DC current gain vs.

collector curren ( )

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○c 2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.B

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