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BYG20DHE3/TR3_11 View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
BYG20DHE3/TR3_11 Ultrafast Avalanche SMD Rectifier Vishay
Vishay Semiconductors Vishay
BYG20DHE3/TR3_11 Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
100
VR = VRRM
10
1
25
50
75
100
125
150
Junction Temperature (°C)
Fig. 3 - Reverse Current vs. Junction Temperature
70
VR = VRRM
60
50
PR - Limit
40
at 100 % VR
30
20
PR - Limit
at 80 % VR
10
0
25
50
75
100
125
150
Junction Temperature (°C)
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
30
f = 1 MHz
25
20
15
10
5
0
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
BYG20D thru BYG20J
Vishay General Semiconductor
600
IR = 0.5 A, iR = 0.125 A
500
400
TA = 125 °C
300
TA = 100 °C
200
TA = 75 °C
TA = 50 °C
100
TA = 25 °C
0
0
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 6 - Reverse Recovery Time vs. Forward Current
200
IR = 0.5 A, iR = 0.125 A
150
TA = 125 °C
TA = 100 °C
100
TA = 75 °C
50
TA = 50 °C
TA = 25 °C
0
0
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 7 - Reverse Recovery Charge vs. Forward Current
1000
125 K/W DC
100 tp/T = 0.5
tp/T = 0.2
tp/T = 0.1
10 tp/T = 0.05
tp/T = 0.02
tp/T = 0.01
Single Pulse
1
10-5
10-4
10-3
10-2
10-1
100
101
102
Pulse Length (s)
Fig. 8 - Thermal Response
Revision: 21-Dec-11
3
Document Number: 88958
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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