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2SA1577 View Datasheet(PDF) - Galaxy Semi-Conductor

Part Name
Description
View to exact match
2SA1577
BILIN
Galaxy Semi-Conductor BILIN
2SA1577 Datasheet PDF : 4 Pages
1 2 3 4
Production specification
PNP Silicon Epitaxial Planar Transistor
2SA1577
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=-100μA,IE=0
IC=-1mA,IB=0
IE=-100μA,IC=0
-40 -
-
V
-32 -
-
V
-5 -
-
V
Collector cut-off current
ICBO
VCB=-20V,IE=0
-
-
-1 μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-
-
-1 μA
DC current gain
hFE
VCE=-3V,IC=-100mA
82 -
390
Collector-emitter saturation voltage VCE(sat)
IC=-300mA, IB=-30mA -
-
-0.6 V
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
VBE(sat)
fT
Cob
IC=-300mA, IB=-300mA -
VCE=-5V, IE= 20mA
-
f=100MHz
VCB=-10V,IE=0,f=1MHz -
-
-1.1 V
200 -
MHz
7
-
pF
CLASSIFICANTION OF hFE
Rank
P
Range
82-120
marking
HP
Q
120-270
HQ
R
180-390
HR
F030
Rev.A
www.gmicroelec.com
2
 

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