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BUZ34 View Datasheet(PDF) - Inchange Semiconductor

Part NameDescriptionManufacturer
BUZ34 N-Channel MOSFET Transistor Iscsemi
Inchange Semiconductor Iscsemi
BUZ34 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ34
DESCRIPTION
·Static Drain-Source On-Resistance
: RDS(on) = 0.2Ω(Max)
·SOA is Power Dissipation Limited
APPLICATIONS
designed for applications such as switching regulators,
switching converters, motor drivers,relay drivers and
drivers for high power bipolar switching transistors
requiring high speed and low gate drive power.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
200
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37
14
A
Total Dissipation@TC=25
78
W
Max. Operating Junction Temperature -55~150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
1.6 /W
35 /W
isc websitewww.iscsemi.cn
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