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74HCT30N View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
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74HCT30N
NXP
NXP Semiconductors. NXP
74HCT30N Datasheet PDF : 16 Pages
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NXP Semiconductors
74HC30; 74HCT30
8-input NAND gate
6. Functional description
Table 3. Function table[1]
Input
Output
A
B
C
D
E
F
G
H
Y
L
X
X
X
X
X
X
X
H
X
L
X
X
X
X
X
X
H
X
X
L
X
X
X
X
X
H
X
X
X
L
X
X
X
X
H
X
X
X
X
L
X
X
X
H
X
X
X
X
X
L
X
X
H
X
X
X
X
X
X
L
X
H
X
X
X
X
X
X
X
L
H
H
H
H
H
H
H
H
H
L
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care.
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min Max Unit
VCC
IIK
IOK
IO
ICC
IGND
Tstg
Ptot
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
DIP14 package
VI < 0.5 V or VI > VCC + 0.5 V
VO < 0.5 V or VO > VCC + 0.5 V
0.5 V < VO < VCC + 0.5 V
0.5
[1] -
[1] -
-
-
50
65
+7
V
20 mA
20 mA
25 mA
50
mA
-
mA
+150 C
[2] -
750 mW
SO14, (T)SSOP14 packages
[2] -
500 mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For DIP14 package: Ptot derates linearly with 12 mW/K above 70 C.
For SO14 package: Ptot derates linearly with 8 mW/K above 70 C.
For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C.
74HC_HCT30
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 27 December 2012
© NXP B.V. 2012. All rights reserved.
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