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J109_D26Z Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza
componentes Descripción
fabricante
J109_D26Z
Fairchild
Fairchild Semiconductor Fairchild
J109_D26Z Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
J109(3) MMBFJ108(4)
Unit
Total Device Dissipation
PD
Derate Above 25°C
625
350
mW
5.0
2.8
mW/°C
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
125
°C/W
200
357
°C/W
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage
IGSS Gate Reverse Current
VGS(off) Gate-Source Cut-Off Voltage
IG = -10 μA, VDS = 0
VGS = -15 V, VDS = 0
VGS = -15 V, VDS = 0, TA = 100°C
MMBFJ108
VDS = 15 V, ID = 10 nA J109
On Characteristics
IDSS
Zero-Gate Voltage Drain Current(5) VDS = 15 V, VGS = 0
MMBFJ108
J109
rDS(on) Drain-Source On Resistance
MMBFJ108
VDS 0.1 V, VGS = 0 J109
Small Signal Characteristics
Cdg(on)
Csg(off)
Cdg(off)
Csg(off)
Drain-Gate &Source-Gate On
Capacitance
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
VDS = 0, VGS = 0, f = 1.0 MHz
VDS = 0, VGS = -10 V, f = 1.0 MHz
VDS = 0, VGS = -10 V, f = 1.0 MHz
Note:
5. Pulse test: pulse width 300 μs, duty cycle 2%.
Min.
-25
-3.0
-2.0
80
40
Max. Unit
V
-3.0
nA
-200
-10.0
V
-6.0
mA
8.0
Ω
12
85
pF
15
pF
15
pF
© 2002 Fairchild Semiconductor Corporation
J109 / MMBFJ108 Rev. 2.2
2
www.fairchildsemi.com
 

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