datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga

J108 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
fabricante
J108
Vishay
Vishay Semiconductors Vishay
J108 Datasheet PDF : 6 Pages
1 2 3 4 5 6
J/SST108 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Capacitance vs. Gate-Source Voltage
100
VDS = 0 V
f = 1 MHz
80
Transconductance vs. Drain Current
100
VGS(off) = 4 V
60
40
Ciss
20
Crss
0
0
4
8
12
16
20
VGS Gate-Source Voltage (V)
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
200
50
gfs and gos @ VDS = 5 V
VGS = 0 V, f = 1 kHz
160
40
TA = 55_C
25_C
10
125_C
VDS = 5 V
f = 1 kHz
1
1
10
100
ID Drain Current (mA)
Noise Voltage vs. Frequency
100
VDS = 5 V
120
gfs
30
80
gos
20
40
10
0
0
0
2
4
6
8
10
VGS(off) Gate-Source Cutoff Voltage (V)
100 nA
10 nA
Gate Leakage Current
TA = 125_C
5 mA
ID =10 mA
1 nA
100 pA
10 pA
1 pA
0
1 mA
IGSS @ 125_C
TA = 25_C
10 mA
5 mA
1 mA
IGSS @ 25_C
4
8
12
16
20
VDG Drain-Gate Voltage (V)
www.vishay.com
7-4
10
ID = 10 mA
40 mA
1
10
100
1k
10 k
f Frequency (Hz)
100 k
Common Gate Input Admittance
100
gig
10
1
0.1
10
big
TA = 25_C
VDG = 20 V
ID = 20 mA
20
50
100
f Frequency (MHz)
Document Number: 70231
S-04028Rev. E, 04-Jun-01
 

Share Link: 

datasheetbank.com [ Política De Privacidad ]