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J109 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
fabricante
J109
Vishay
Vishay Semiconductors Vishay
J109 Datasheet PDF : 6 Pages
1 2 3 4 5 6
J/SST108 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
20
1000
rDS @ ID = 10 mA, VGS = 0 V
IDSS @ VDS = 15 V, VGS = 0 V
16
800
On-Resistance vs. Drain Current
50
TA = 25_C
40
12
rDS
VGS(off) = 2 V
600
30
8
IDSS
400
4
200
0
0
0
2
4
6
8
10
VGS(off) Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
40
ID = 10 mA
rDS changes X 0.7%/_C
32
VGS(off) = 2 V
24
16
4 V
8
8 V
0
55 35 15 5
25 45 65 85 105 125
TA Temperature (_C)
Turn-On Switching
5
tr approximately independent of ID
VDD = 1.5 V, RG = 50
4
VGS(L) = 10 V
td(on) @ ID = 25 mA
3
td(on) @ ID = 10 mA
2
20
4 V
10
8 V
0
1
10
100
ID Drain Current (mA)
Output Characteristics
100
VGS(off) = 2 V
80
60
40
20
0
0
30
24
18
VGS = 0 V
0.2 V
0.4 V
0.6 V
0.8 V
2
4
6
8
10
VDS Drain-Source Voltage (V)
Turn-Off Switching
td(off) independent
of device VGS(off)
VDD = 1.5 V, VGS(L) = 10 V
tf
VGS(off) = 2 V
12
VGS(off) = 8 V
1
tr
6
td(off)
0
0
2
4
6
8
10
VGS(off) Gate-Source Cutoff Voltage (V)
Document Number: 70231
S-04028Rev. E, 04-Jun-01
0
0
5
10
15
20
25
ID Drain Current (mA)
www.vishay.com
7-3
 

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