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J109 View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
J109 N–Channel JFETs Vishay
Vishay Semiconductors Vishay
J109 Datasheet PDF : 6 Pages
1 2 3 4 5 6
J/SST108 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST108
J/SST109
J/SST110
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source
On-Resistance
Gate-Source
Forward Voltage
Dynamic
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
rDS(on)
VGS(F)
IG = –1 mA , VDS = 0 V
VDS = 5 V, ID = 1 mA
–32
–25
–25
–25
V
–3 –10 –2 –6 –0.5 –4
VDS = 15 V, VGS = 0 V
80
40
10
mA
VGS = –15 V, VDS = 0 V
–0.01
–3
–3
–3
TA = 125_C
–5
VDG = 10 V, ID = 10 mA
–0.01
nA
VDS = 5 V, VGS = –10 V
0.02
3
3
3
TA = 125_C
1.0
VGS = 0 V, VDS v 0.1 V
8
12
18
W
IG = 1 mA , VDS = 0 V
0.7
V
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source
On-Resistance
Common-Source
Input Capacitance
Common-Source Reverse
Transfer Capacitance
Equivalent Input
Noise Voltage
Switching
gfs
17
VDS = 5 V, ID = 10 mA, f = 1 kHz
gos
0.6
rds(on)
VGS = 0 V, ID = 0 mA , f = 1 kHz
VDS = 0 V
SST
60
Ciss
VGS = 0 V
f = 1 MHz
J Series
60
VDS = 0 V
SST
11
Crss
VGS = –10 V
f = 1 MHz
J Series
11
en
VDG = 5 V, ID = 10 mA
f = 1 kHz
3.5
mS
8
12
18
W
85
85
85
pF
15
15
15
nV
Hz
Turn-On Time
Turn-Off Time
td(on)
3
tr
VDD = 1.5 V, VGS(H) = 0 V
1
td(off)
See Switching Diagram
4
tf
18
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
ns
NIP
www.vishay.com
7-2
Document Number: 70231
S-04028—Rev. E, 04-Jun-01
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