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J110-1997 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
fabricante
J110(1997)
Vishay
Vishay Semiconductors Vishay
J110 Datasheet PDF : 5 Pages
1 2 3 4 5
J/SST108 Series
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Specificationsa
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentc
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source
On-Resistance
Gate-Source
Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source
On-Resistance
Common-Source
Input Capacitance
Common-Source Reverse
Transfer Capacitance
Equivalent Input
Noise Voltage
Switching
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
Typb
J/SST108
Limits
J/SST109
J/SST110
Min Max Min Max Min Max Unit
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
rDS(on)
VGS(F)
IG = –1 mA , VDS = 0 V
–32 –25
–25
–25
V
VDS = 5 V, ID = 1 mA
–3 –10 –2 –6 –0.5 –4
VDS = 15 V, VGS = 0 V
80
40
10
mA
VGS = –15 V, VDS = 0 V
–0.01
–3
–3
–3
TA = 125_C –5
VDG = 10 V, ID = 10 mA
–0.01
nA
VDS = 5 V, VGS = –10 V
0.02
3
3
3
TA = 125_C 1.0
VGS = 0 V, VDS v 0.1 V
8
12
18 W
IG = 1 mA , VDS = 0 V
0.7
V
gfs
17
VDS = 5 V, ID = 10 mA, f = 1 kHz
gos
0.6
rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz
VDS = 0 V
SST
60
Ciss
VGS = 0 V
f = 1 MHz
J Series
60
VDS = 0 V
SST
11
Crss
VGS = –10 V
f = 1 MHz
J Series
11
en
VDG = 5 V, ID = 10 mA
f = 1 kHz
3.5
td(on)
3
tr
VDD = 1.5 V, VGS(H) = 0 V
1
td(off)
See Switching Diagram
4
tf
18
mS
8
12
18 W
85
85
85
pF
15
15
15
nV
Hz
ns
Notes
a. TA = 25_C unless otherwise noted.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW v300 ms duty cycle v3%.
2
NIP
Siliconix
S-52424—Rev. D, 14-Apr-97
 

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