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J109 Ver la hoja de datos (PDF) - Micross Components

Número de pieza
componentes Descripción
fabricante
J109
MICROSS
Micross Components MICROSS
J109 Datasheet PDF : 1 Pages
1
J109
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J109
This n-channel JFET is optimised for low noise high
performance switching. The part is particularly suitable
for use in low noise audio amplifiers. The SOT-23
package is well suited for cost sensitive applications
and mass production.
(See Packaging Information).
J109 Benefits:
ƒ Low On Resistance
ƒ Low insertion loss
ƒ Low Noise
J109 Applications:
ƒ Analog Switches
ƒ Commutators
ƒ Choppers
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J109
LOW ON RESISTANCE
rDS(on) 12Ω
FAST SWITCHING
t(on) 4ns
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
55°C to +150°C
55°C to +150°C
350mW
50mA
VGDS = 25V
VGSS = 25V
J109 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
BVGSS
Gate to Source Breakdown Voltage
25
‐‐
‐‐
VGS(off)
Gate to Source Cutoff Voltage
2
‐‐
6
VGS(F)
Gate to Source Forward Voltage
‐‐
0.7
‐‐
IDSS
Drain to Source Saturation Current (Note 2) 40
‐‐
‐‐
IGSS
Gate Reverse Current
‐‐
0.01
3
IG
Gate Operating Current
‐‐
0.01
‐‐
ID(off)
Drain Cutoff Current
‐‐
0.02
3
Click To rDS(on)
Drain to Source On Resistance
‐‐
‐‐
J109 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
gfs
Forward Transconductance
‐‐
17
12
MAX
‐‐
gos
Output Conductance
‐‐
0.6
‐‐
rDS(on)
Drain to Source On Resistance
‐‐
‐‐
12
Ciss
Input Capacitance
‐‐
60
‐‐
Crss
Reverse Transfer Capacitance
‐‐
11
‐‐
en
Equivalent Noise Voltage
‐‐
3.5
‐‐
UNITS
CONDITIONS
IG = 1µA, VDS = 0V
VDS = 5V, ID = 1µA
V
IG = 1mA, VDS = 0V
mA
VDS = 15V, VGS = 0V
VGS = 15V, VDS = 0V
nA
VDG = 10V, ID = 10mA
VDS = 5V, VGS = 10V
Buy Ω
UNITS
mS
VGS = 0V, VDS 0.1V
CONDITIONS
VDS = 5V, ID = 10mA , f = 1kHz
Ω
pF
nV/Hz
VGS = 0V, ID = 0A, f = 1kHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = 10V, f = 1MHz
VDS = 5V, ID = 10mA , f = 1kHz
J109 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
UNITS
CONDITIONS
td(on)
Turn On Time
3
tr
Turn On Rise Time
1
ns
td(off)
Turn Off Time
4
tf
Turn Off Fall Time
18
VDD = 1.5V
VGS(H) = 0V
See Switching Circuit
Note 1 Absolute maximum ratings are limiting values above which J109 serviceability may be impaired. Note 2 – Pulse test: PW300 µs, Duty Cycle 3%
J109 SWITCHING CIRCUIT PARAMETERS
VGS(L)
RL
ID(on)
7V
150Ω
10mA
Available Packages:
J109 in SOT-23
J109 in bare die.
SOT-23 (Top View)
SWITCHING TEST CIRCUIT
Micross Components Europe
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
 

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