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J108 View Datasheet(PDF) - InterFET

Part Name
Description
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J108 Datasheet PDF : 1 Pages
1
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B-49
J108, J109
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
50 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
Drain Gate + Source Gate Capacitance
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
V(BR)GSS
IGSS
VGS(OFF)
IDSS
ID(OFF)
J108
J109
Min Max Min Max Unit
– 25
– 25
V
–3
– 3 nA
– 3 – 10 – 2 – 6 V
80
40
mA
3
3 nA
rds(on)
Cgd
Cgs
Cgd + Cgs
td(on)
tr
td(off)
tf
8
15
15
85
Typ
3
1
4
18
12
15 pF
15 pF
85 pF
Typ
3
ns
1
ns
4
ns
18
ns
Process NJ450
Test Conditions
IG = – 1 µA, VDS = ØV
VGS = – 15V, VDS = ØV
VDS = 5V, ID = 1 µA
VDS = 15V, VGS = ØV
VDS = 5V, VGS = – 10V
VGS = Ø, VDS < = 0.1V
VDS = ØV, VGS = – 10V
VDS = ØV, VGS = – 10V
VDS = VGS = ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
VDD
VGS(OFF)
RL
J108 J109
1.5
1.5
V
– 12
–7
V
150
150
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
www.interfet.com
Surface Mount
SMPJ108, SMPJ109
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
 

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