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BSS138 View Datasheet(PDF) - ZP Semiconductor

Part Name
Description
View to exact match
BSS138
ZPSEMI
ZP Semiconductor ZPSEMI
BSS138 Datasheet PDF : 3 Pages
1 2 3
BSS138
N-Channel Enhancement Mode MOSFET
Feature
50V/0.2A,
RDS(ON) = 3.5Ω(MAX) @VGS = 5V. Id = 0.2A
RDS(ON) = 10Ω(MAX) @VGS = 2.75V. Id = 0.2A
Super High dense cell design for extremely low RDS(ON) .
Reliable and Rugged.
Low Threshold Voltage ( 0.5V—1.5V ) Make it Ideal for Low Voltage Applications.
SOT-23 for Surface Mount Package.
SOT-23
Applications
Power Management in DC/DC ConvertersPortable and Battery-powered Products.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
TA=25Unless Otherwise noted
Symbol
VDS
VGS
ID
Limit
50
±20
0.2
Units
V
V
A
Electrical Characteristics
Parameter
Symbol
TA=25Unless Otherwise noted
Test Conditions
Off Characteristics
Drain to Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
Zero-Gate Voltage Drain Current
IDSS
VDS=50V, VGS=0V
VDS=25V, VGS=0V
Gate Body Leakage Current, Forward
IGSSF
VGS=20V, VDS=0V
Gate Body Leakage Current, Reverse
IGSSR
VGS=-20V, VDS=0V
On Characteristics
Gate Threshold Voltage
VGS(th)
VGS= VDS, ID=1.0 mA
Static Drain-source
On-Resistance
RDS(ON)
VGS =5.0V, ID =0.2A
VGS =2.75V, ID =0.2A
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS=0.2A
Min Typ. Max Units
50
-
-
V
-
-
0.5
µA
-
-
0.1
-
-
100
nA
-
-
-100
nA
0.5
-
1.5
V
-
-
3.5
Ω
-
-
10
Ω
2.5
V
sales@zpsemi.com
www.zpsemi.com
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