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IRFP450A View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
IRFP450A Power MOSFET Vishay
Vishay Semiconductors Vishay
IRFP450A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP450A, SiHFP450A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.65
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 8.4 Ab
VDS = 50 V, ID = 8.4 Ab
500
-
-
V
-
0.58
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.40
Ω
7.8
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz
-
2038
-
-
307
-
-
10
-
pF
2859
VGS = 0 V; VDS = 400 V, f = 1.0 MHz
VGS = 0 V; VDS = 0 V to 400 Vc
-
VGS = 10 V
ID = 14 A, VDS = 400 V,
see fig. 6 and 13b
-
-
81
96
-
64
-
16
nC
-
26
-
15
-
VDD = 250 V, ID = 14 A,
RG = 6.2 Ω, RD = 17 Ω, see fig. 10b
-
36
-
ns
-
35
-
-
29
-
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
14
A
-
-
56
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
-
-
1.4
V
trr
TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb
-
487
731
ns
Qrr
-
3.9
5.8
µC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
www.vishay.com
2
Document Number: 91230
S-81271-Rev. A, 16-Jun-08
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