1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics
VGS
Top : 15V
10 V
8.0 V
101
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5V
100
10-110-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100
101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
1.0
0.8
VGS = 10 V
0.6
0.4
VGS = 20 V
0.2
@ Note : TJ = 25 oC
0.0
0
10
20
30
40
50
60
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
4000
3000
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
2000
1000
C oss
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100
101
VDS , Drain-Source Voltage [V]
IRFP450A
Fig 2. Transfer Characteristics
101
150 oC
100
25 oC
10-1
2
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 50 V
3. 250 µs Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
10
VDS = 100 V
VDS = 250 V
VDS = 400 V
5
@ Notes : ID = 14.0 A
0
0
20
40
60
80 100 120 140
QG , Total Gate Charge [nC]