Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-source leakage
IGSS
−
− ±100 nA VGS= ±20V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 100
−
−
V ID=1mA, VGS=0V
Zero gate voltage drain current
IDSS
−
−
10
µA VDS=100V, VGS=0V
Gate threshold voltage
VGS(th)
1.0
−
2.5
V VDS=10V, ID=1mA
Static drain-source on-state
resistance
Forward transfer admittance
− 0.18 0.22
ID=2.5A, VGS=10V
RDS(on)
Ω
− 0.25 0.28
ID=2.5A, VGS=4V
Yfs ∗ 4.0
−
−
S ID=2.5A, VDS=10V
Input capacitance
Ciss
−
520
−
pF VDS=10V
Output capacitance
Coss
−
175
−
pF VGS=0V
Reverse transfer capacitance
Crss
−
60
−
pF f=1MHz
Turn-on delay time
td(on)
−
5.0
−
ns ID=2.5A, VDD=50V
Rise time
tr
−
20
−
ns VGS=10V
Turn-off delay time
td(off)
−
50
−
ns RL=20Ω
Fall time
∗ Pw ≤ 300µs, Duty cycle ≤ 1%
tf
−
20
−
ns RG=10Ω
2SK2504
Rev.A
2/5