K2504 View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

View to exact match

K2504

4V Drive Nch MOS FET

ROHM Semiconductor 

Transistors

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Test Conditions

Gate-source leakage

IGSS

−

− ±100 nA VGS= ±20V, VDS=0V

Drain-source breakdown voltage V(BR)DSS 100

−

−

V ID=1mA, VGS=0V

Zero gate voltage drain current

IDSS

−

−

10

µA VDS=100V, VGS=0V

Gate threshold voltage

VGS(th)

1.0

−

2.5

V VDS=10V, ID=1mA

Static drain-source on-state

resistance

Forward transfer admittance

− 0.18 0.22

ID=2.5A, VGS=10V

RDS(on)

Ω

− 0.25 0.28

ID=2.5A, VGS=4V

Yfs ∗ 4.0

−

−

S ID=2.5A, VDS=10V

Input capacitance

Ciss

−

520

−

pF VDS=10V

Output capacitance

Coss

−

175

−

pF VGS=0V

Reverse transfer capacitance

Crss

−

60

−

pF f=1MHz

Turn-on delay time

td(on)

−

5.0

−

ns ID=2.5A, VDD=50V

Rise time

tr

−

20

−

ns VGS=10V

Turn-off delay time

td(off)

−

50

−

ns RL=20Ω

Fall time

∗ Pw ≤ 300µs, Duty cycle ≤ 1%

tf

−

20

−

ns RG=10Ω

2SK2504

Rev.A

2/5

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