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LM158D(2005) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
LM158D
(Rev.:2005)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
LM158D Datasheet PDF : 16 Pages
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Electrical Characteristics
LM158-LM258-LM358-LM158A-LM258A-LM358A
Table 2.
Symbol
Electrical
characteristics
for
V+
CC
=
+5V,
VCC-=
Ground,
Vo
=
1.4V,
Tamb
=
+25°C
(unless
otherwise specified)
Parameter
LM158A-LM258A
LM358A
LM158-LM258
LM358
Unit
Min. Typ. Max. Min. Typ. Max.
VOPP
Output Voltage Swing (RL = 2kΩ)
Tamb = +25°C
Tmin Tamb Tmax
0
0
VCC+ -
1.5
VCC+ -2
0
0
VCC+ -
1.5
VCC+ -2
High Level Output Voltage (VCC+ = 30V)
VOH
Tamb = +25°CRL = 2k
Tmin Tamb Tmax
Tamb = +25°CRL = 10k
26 27
26
26 27
26
V
27 28
27 28
Tmin Tamb Tmax
27
27
Low Level Output Voltage (RL = 10k)
VOL Tamb = +25°C
Tmin Tamb Tmax
5
20
20
5
20
mV
20
Slew Rate
SR VCC = 15V, Vi = 0.5 to 3V, RL = 2k,
CL = 100pF, unity Gain
0.3 0.6
0.3 0.6
V/µs
GBP
Gain Bandwidth Product
VCC = 30V, f =100kHz,Vin = 10mV, RL = 2k,
CL = 100pF
0.7 1.1
0.7 1.1
MHz
THD
Total Harmonic Distortion
f = 1kHz, Av = 20dB, RL = 2kΩ, Vo = 2Vpp,
CL = 100pF, VO = 2Vpp
0.02
0.02
%
en
Equivalent Input Noise Voltage
f = 1kHz, Rs = 100Ω, VCC = 30V
--n----V-----
55
55
Hz
DVio Input Offset Voltage Drift
7
15
7
30
µV/
°C
DIIio Input Offset Current Drift
10
200
10
300
pA/
°C
Vo1/Vo2
Channel Separation - note (4) 1kHz f
20kHZ
120
120
dB
1. Vo = 1.4V, Rs = 0, 5V < VCC+ < 30V, 0 < Vic < VCC+ - 1.5V
2. The direction of the input current is out of the IC. This current is essentially constant, independent of the state of the output
so no loading change exists on the input lines.
3. The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3V. The
upper end of the common-mode voltage range is VCC+ - 1.5V, but either or both inputs can go to +32V without damage.
4. Due to the proximity of external components insure that coupling is not originating via stray capacitance between these
external parts. This typically can be detected as this type of capacitance increases at higher frequencies.
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