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SI1032R(2008) View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
SI1032R
(Rev.:2008)
Vishay
Vishay Semiconductors Vishay
SI1032R Datasheet PDF : 5 Pages
1 2 3 4 5
Si1032R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.3
3.0
0.2
2.5
ID = 0.25 mA
0.1
2.0
0.0
1.5
- 0.1
- 0.2
1.0
VGS = 2.8 V
0.5
- 0.3
- 50 - 25 0
25 50 75 100 125
TJ - Temperature (°C)
Threshold Voltage Variance vs. Temperature
7
0.0
- 50 - 25
0
25 50 75
TJ - Temperature (°C)
IGSS vs. Temperature
100 125
6
5
4
3
2
1
0
- 50 - 25 0
25 50 75
TJ - Temperature (°C)
BVGSS vs. Temperature
100 125
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 500 °C/W
Single Pulse
0.01
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10- 4
10- 3
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71172.
www.vishay.com
4
Document Number: 71172
S-81543-Rev. E, 07-Jul-08
 

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