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SI1032R-T1-E3(2008) View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
SI1032R-T1-E3
(Rev.:2008)
Vishay
Vishay Semiconductors Vishay
SI1032R-T1-E3 Datasheet PDF : 5 Pages
1 2 3 4 5
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
50
100
40
80
30
60
VGS = 0 V
f = 1 MHz
Si1032R/X
Vishay Siliconix
Ciss
20
10
0
0
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
50
100
150
200
250
ID - Drain Current (mA)
On-Resistance vs. Drain Current
5
VDS = 10 V
ID = 150 mA
4
3
2
40
Coss
20
0 Crss
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.60
1.40
1.20
1.00
VGS = 4.5 V
ID = 200 mA
VGS = 1.8 V
ID = 175 mA
1
0.80
0
0.0
0.2
0.4
0.6
0.8
Qg - Total Gate Charge (nC)
Gate Charge
1000
TJ = 125 °C
100
TJ = 25 °C
TJ = 50 °C
10
0.60
- 50 - 25 0
25 50 75 100 125
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
50
40
ID = 200 mA
30
20
ID = 175 mA
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Surge-Drain Diode Forward Voltage
0
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71172
S-81543-Rev. E, 07-Jul-08
www.vishay.com
3
 

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