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SI1032X-T1-GE3(2008) View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
SI1032X-T1-GE3
(Rev.:2008)
Vishay
Vishay Semiconductors Vishay
SI1032X-T1-GE3 Datasheet PDF : 5 Pages
1 2 3 4 5
N-Channel 1.5-V (G-S) MOSFET
Si1032R/X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
5 at VGS = 4.5 V
7 at VGS = 2.5 V
20
9 at VGS = 1.8 V
10 at VGS = 1.5 V
ID (mA)
200
175
150
50
SC-75A or SC-89
G1
3D
S2
Top View
Marking Code: G
Ordering Information:
Si1032R-T1-E3 (SC-75A, Lead (Pb)-free)
Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1032X-T1-E3 (SC-89, Lead (Pb)-free)
Si1032X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free Option Available
• Low-Side Switching
• Low On-Resistance: 5 Ω
• Low Threshold: 0.9 V (typ.)
• Fast Switching Speed: 35 ns
• TrenchFET® Power MOSFETs: 1.5-V Rated
• 2000 V ESD Protection
RoHS
COMPLIANT
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Si1032R
Si1032X
Parameter
Symbol
5s
Steady State
5s
Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
20
V
VGS
±6
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
ID
Pulsed Drain Currenta
IDM
200
140
110
100
500
210
200
150
140
mA
600
Continuous Source Current (Diode Conduction)a
IS
250
200
300
240
Maximum Power Dissipationa for SC-75
TA = 25 °C
TA = 85 °C
PD
280
145
250
130
340
170
300
mW
150
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes:
a. Surface Mounted on FR4 board.
Document Number: 71172
S-81543-Rev. E, 07-Jul-08
www.vishay.com
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