K168 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

View to exact match

K168

Silicon N-Channel Junction FET

Hitachi -> Renesas Electronics 

2SK168

Absolute Maximum Ratings (Ta = 25°C)

Item

Gate to drain voltage

Gate to source voltage

Gate current

Drain current

Channel power dissipation

Channel temperature

Storage temperature

Symbol

VGDO

VGSS

IG

ID

Pch

Tch

Tstg

Ratings

Unit

–30

V

–1

V

10

mA

20

mA

200

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Gate to drain breakdown

voltage

V(BR)GDO

–30

—

Gate cutoff current

I GSS

—

—

Drain current

I

*1

DSS

4

—

Gate to source cutoff voltage VGS(off)

—

—

Forward transfer admittance |yfs|

8

10

Input capacitance

Ciss

—

6.8

Reverse transfer capacitance Crss

—

0.1

Power gain

PG

—

27

Noise figure

NF

—

1.7

Note: 1. The 2SK168 is grouped by IDSS as follows.

D

E

F

4 to 8

6 to 12

10 to 20

Max Unit

—

V

–10 nA

20

mA

–3.0 V

—

mS

—

pF

—

pF

—

dB

—

dB

Test conditions

IG = –100 µA, IS = 0

VGS = –0.5 V, VDS = 0

VDS = 5 V, VGS = 0

VDS = 5 V, ID = 10 µA

VDS = 5 V, VGS = 0, f = 1 kHz

VDS = 5 V, VGS = 0, f = 1 MHz

VDS = 5 V, VGS = 0, f = 1 MHz

VDS = 5 V, VGS = 0,

f = 100 MHz

VDS = 5 V, VGS = 0,

f = 100 MHz

2

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