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IXXH110N65C4 View Datasheet(PDF) - IXYS CORPORATION

Part Name
Description
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IXXH110N65C4
IXYS
IXYS CORPORATION IXYS
IXXH110N65C4 Datasheet PDF : 6 Pages
1 2 3 4 5 6
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2
2.4
2.0
1.6
1.2
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
VCE = 400V
I C = 110A
I C = 55A
4
6
8
10
12
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Eoff
Eon - - - -
RG = 2VGE = 15V
VCE = 400V
I C = 110A
16
14
12
10
8
6
4
2
0
14
12
10
8
6
0.8
4
0.4
I C = 55A
2
0.0
25
0
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
160
170
140
tfi
td(off) - - - -
RG = 2, VGE = 15V
120
VCE = 400V
150
100
80
130
60
TJ = 25ºC, 150ºC
40
110
20
0
90
55 60 65 70 75 80 85 90 95 100 105 110
IC - Amperes
IXXH110N65C4
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
2.6
8
Eoff
Eon - - - -
2.2
RG = 2VGE = 15V
7
VCE = 400V
1.8
6
1.4
TJ = 150ºC
1.0
0.6
5
4
TJ = 25ºC
3
0.2
55
160
140
120
2
60 65 70 75 80 85 90 95 100 105 110
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
450
tfi
td(off) - - - -
TJ = 150ºC, VGE = 15V
400
VCE = 400V
350
100
300
80
250
I C = 110A
60
200
I C = 55A
40
150
20
100
0
50
2
4
6
8
10
12
14
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
120
190
tfi
td(off) - - - -
100
RG = 2, VGE = 15V
170
VCE = 400V
80
150
60
I C = 110A
40
130
I C = 55A
110
20
90
0
70
25
50
75
100
125
150
TJ - Degrees Centigrade
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