KTB2955 View Datasheet(PDF) - Inchange Semiconductor
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Description
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| KTB2955 Datasheet PDF : 0 Pages | |||
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTB2955
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
-120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
-2.5
V
VBE(on) Base-Emitter On Voltage
ICB
Collector Cutoff Current
IC= -5A ; VCE= -5V
VCB= -120V; IE= 0
-1.5
V
-10 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-10 μA
hFE
DC Current Gain
IC= -1A ; VCE= -5V
55
160
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
280
pF
fT
Current Gain-Bandwidth Product
IC= -1A ; VCE= -5V
10
MHz
hFE Classifications
R
O
55-110 80-160
isc website： www.iscsemi.com
2 isc & iscsemi is registered trademark
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