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IRF2807L View Datasheet(PDF) - Kersemi Electronic Co., Ltd.

Part NameDescriptionManufacturer
IRF2807L Advanced Process Technology KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
IRF2807L Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
7000
6000
5000
4000
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3000
2000
1000
Coss
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
IRF2807S/IRF2807L
20  ID = 43A
16
12
 VDS = 60V
VDS = 37V
VDS = 15V
8
4
 FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
 TJ = 175° C
10
 TJ = 25 ° C
1
0.1
0.0
 VGS = 0 V
0.4
0.8
1.2
1.6
2.0
2.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
2014-8-26
4
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