IRFBC30 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

View to exact match

IRFBC30

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

IRFBC30

FEATURES

·Lower Input Capacitance

·Improved Gate Charge

·Extended Safe Operating Area

·Rugged Gate Oxide Technology

DESCRIPTION

·High current ,high speed switching

·Switch mode power supplies

·DC-AC converters for welding equipment and

Uninterruptible power supplies and motor

Driver.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VDSS

VGS

Drain-Source Voltage

Gate-Source Voltage-Continuous

600

V

±20

V

ID

Drain Current-Continuous

3.6

A

IDM

Drain Current-Single Pluse

14

A

PD

Total Dissipation @TC=25℃

75

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Rth j-a

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

MAX UNIT

1.7

℃/W

62.5 ℃/W

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

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