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B1386_07 View Datasheet(PDF) - ROHM Semiconductor

Part Name
Description
View to exact match
B1386_07
ROHM
ROHM Semiconductor ROHM
B1386_07 Datasheet PDF : 5 Pages
1 2 3 4 5
Transistors
2SB1386 / 2SB1412
Low frequency transistor (20V, 5A)
2SB1386 / 2SB1412
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.35V (Typ.)
(IC/IB = 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2098 / 2SD2118.
zDimensions (Unit : mm)
2SB1386
2SB1412
zStructure
Epitaxial planar type
PNP silicon transistor
(1) Base
ROHM : MPT3
(2) Collector
EIAJ : SC-62
(3) Emitter
Abbreviated symbol: BH
Denotes hFE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
30
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
5
IC
10
0.5
2SB1386
Collector power
dissipation
PC
2
1
2SB1412
10
Junction temperature
Tj
150
Storage temperature
Tstg
55 to 150
1 Single pulse, Pw=10ms
2 When mounted on a 40×40×0.7 mm ceramic board.
Unit
V
V
V
A(DC)
A(Pulse) 1
W
W 2
W
W(Tc=25°C)
°C
°C
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
Rev.B
1/4
 

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