BUZ173 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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BUZ173

SIPMOS® Power Transistor

Infineon Technologies 

BUZ 173

Avalanche energy EAS = ƒ(Tj)

parameter: ID = -3.6 A, VDD = -25 V

RGS = 25 Ω, L = 23 mH

220

mJ

EAS 180

160

140

120

100

80

60

40

20

0

20 40 60 80 100 120 ˚C 160

Tj

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

-240

V

-230

V(BR)DSS

-225

-220

-215

-210

-205

-200

-195

-190

-185

-180

-60

-20

20

60

100 ˚C 160

Tj

Data Sheet

8

05.99

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