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BDX42 View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BDX42
Philips
Philips Electronics Philips
BDX42 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
NPN Darlington transistors
Product specification
BDX42; BDX43; BDX44
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICES
IEBO
hFE
VCEsat
VCEsat
VCEsat
VBEsat
VBEsat
collector cut-off current
BDX42
BDX43
BDX44
collector cut-off current
IE = 0; VCB = 60 V
IE = 0; VCB = 80 V
IE = 0; VCB = 100 V
BDX42
BDX43
BDX44
emitter cut-off current
DC current gain
collector-emitter saturation voltage
collector-emitter saturation voltage
VBE = 0; VCE = 45 V
VBE = 0; VCE = 60 V
VBE = 0; VCE = 80 V
IC = 0; VEB = 4 V
VCE = 10 V; see Fig. 2
IC = 150 mA
IC = 500 mA
IC = 500 mA; IB = 0.5 mA
IC = 500 mA; IB = 0.5 mA; Tj = 150 °C
BDX42; BDX44
IC = 1 A; IB = 4 mA
IC = 1 A; IB = 4 mA; Tj = 150 °C
collector-emitter saturation voltage
BDX43
base-emitter saturation voltage
base-emitter saturation voltage
BDX42; BDX44
IC = 1 A; IB = 1 mA
IC = 1 A; IB = 1 mA; Tj = 150 °C
IC = 500 mA; IB = 0.5 mA
IC = 1 A; IB = 4 mA
VBEsat
base-emitter saturation voltage
BDX43
IC = 1 A; IB = 1 mA
fT
transition frequency
IC = 500 mA; VCE = 5 V; f = 100 MHz
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = 0.5 mA
MIN. TYP. MAX. UNIT
100 nA
100 nA
100 nA
50 nA
50 nA
50 nA
50 nA
1000
2000
1.3 V
1.3 V
1.6 V
1.6 V
1.6 V
1.8 V
1.9 V
2.2 V
2.2 V
200
MHz
500 ns
200 ns
300 ns
1300 ns
950 ns
350 ns
1997 Jul 02
4
 

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