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STD11N65M5 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STD11N65M5 Datasheet PDF : 0 Pages
Electrical characteristics STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Figure 14. Normalized on-resistance vs
temperature
Figure 15. Normalized gate threshold voltage
vs temperature
RDS(on)
(norm)
2.1
1.9
1.7
VGS = 10 V
ID = 4.5 A
AM05460v1
VGS(th)
(norm)
1.10
1.00
VDS = VGS
ID = 250 µA
AM05459v1
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
0.70
-50 -25 0 25 50 75 100 TJ(°C)
Figure 16. Drain-source diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
VSD
(V)
TJ=-50°C
1.2
1.0
AM05461v1
VDS
(norm)
1.08
1.06
1.04
ID = 1mA
AM10399v1
0.8
0.6
TJ=150°C
0.4
0.2
TJ=25°C
0
0 10 20 30 40 50 ISD(A)
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25 0
25 50 75 100 TJ(°C)
Figure 18. Switching losses vs gate
resistance(1)
E (μJ)
VDD=400V
VGS=10V
100 ID=6A
Eon
AM15407v1
80
60
40
Eoff
20
0
0 5 10 15 20 25 30 35 40 45 RG(Ω)
1. Eon including reverse recovery of a SiC diode
8/25
Doc ID 022864 Rev 2
 

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