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STP11N65M5 View Datasheet(PDF) - STMicroelectronics

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STP11N65M5 Datasheet PDF : 0 Pages
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(v)
tr(v)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 400 V, ID = 7.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21 and
Figure 24)
Min. Typ. Max. Unit
23
ns
10
ns
-
-
13.5
ns
13
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
-
VSD (2) Forward on voltage
ISD = 9 A, VGS = 0
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A, di/dt = 100 A/µs
-
VDD = 100 V (see Figure 21)
trr
Reverse recovery time
ISD = 9 A, di/dt = 100 A/µs
Qrr Reverse recovery charge
VDD = 100 V, Tj = 150 °C
-
IRRM Reverse recovery current
(see Figure 21)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
9A
36 A
1.5 V
232
ns
2
µC
17.5
A
328
ns
2.8
µC
17
A
Doc ID 022864 Rev 2
5/25
 

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