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KSD2012Y View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
KSD2012Y NPN Epitaxial Silicon Transistor Fairchild
Fairchild Semiconductor Fairchild
KSD2012Y Datasheet PDF : 4 Pages
1 2 3 4
Typical Characteristics
4
IBIB==908m0mAA
3
IB = 70mA
IB = 60mA
IB = 50mA
IB = 40mA
2
IB = 30mA
IB = 20mA
1
IB = 10mA
IB = 0mA
0
0
1
2
3
4
5
6
7
8
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
Ic = 10 IB
1
0.1
0.01
0.001
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
10
ICmax(pulse)
IC(max)
DC
1
0.1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
1000
100
VCE = 5V
10
1
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
4
VCE = 5V
3
2
1
0
0.4
0.8
1.2
1.6
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000
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