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KSD2012G View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
KSD2012G
Fairchild
Fairchild Semiconductor Fairchild
KSD2012G Datasheet PDF : 4 Pages
1 2 3 4
KSD2012
Low Frequency Power Amplifier
• Complement to KSB1366
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
h FE1
hFE2
VCE(sat)
VBE(on)
fT
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
IC = 50mA, IB = 0
VCB = 60V, IE = 0
VEB = 7V, IC = 0
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
IC = 2A, IB = 0.2A
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 0.5A
hFE Classification
Classification
hFE1
Y
100 ~ 200
Value
60
60
7
3
0.3
25
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Min.
60
100
20
Typ.
0.4
0.7
3
Max.
100
10
320
Units
V
µA
µA
1
V
1
V
MHz
G
150 ~ 320
©2000 Fairchild Semiconductor International
Rev. A, February 2000
 

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