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K1960 Просмотр технического описания (PDF) - TY Semiconductor

Номер в каталогеКомпоненты Описаниепроизводитель
K1960 MOS Field Effect Transistor Twtysemi
TY Semiconductor Twtysemi
K1960 Datasheet PDF : 1 Pages
1
SSMMDD TTyyppee
IC
Product specification
2SK1960
Features
Gate can be driven by 1.5V
Low ON resistance
RDS(on)=0.8 MAX.@VGS=1.5V,ID=0.1A
RDS(on)=0.2 MAX.@VGS=4.0V,ID=1.5A
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 3
0.48+0.1
-0.1
0.53+0.1
-0.1
Unit: mm
1.50+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
1 Gate
11.. SBoauserce
2 Drain
22.. DCroallienctor
333.. GSEmaotuieitrtcere
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
Symbol
Rating
Unit
VDSS
16
V
VGSS
7
V
ID
3.0
A
IDP
6.0
A
PD
2.0
W
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to Source Cutoff Voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
IDSS VDS=16V,VGS=0
IGSS VGS= 7V,VDS=0
VGS(off) VDS=3V,ID=1mA
Yfs VDS=3V,ID=1.5A
VGS=1.5V,ID=0.1A
RDS(on) VGS=2.5V,ID=1.5A
VGS=4.0V,ID=1.5A
Ciss
Coss VDS=3V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=1.5A,VGS(on)=3V,RL=2
,VDD=3V,RG=10
tf
Min Typ Max Unit
100
A
3.0 A
0.5 0.8 1.1 V
2.0
S
0.35 0.8
0.17 0.3
0.12 0.2
370
pF
320
pF
115
pF
70
ns
200
ns
150
ns
200
ns
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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