K1960 Просмотр технического описания (PDF) - NEC => Renesas Technology
| Номер в каталоге | Компоненты Описание | производитель |
| K1960 | N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |  NEC => Renesas Technology  |
K1960 Datasheet PDF : 7 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.4
0.3
ID = 0.1 A
1.5 A
0.2
3A
0.1
0
2
4
6
8
10
VGS - Gate to Source Voltage - V
1 000
500
200
100
50
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
Ciss
Coss
Crss
20
VGS = 0
f = 1 MHz
10
12
5
10 20
50 100
VDS - Drain to Source Voltage - V
2SK1960
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
1
0.1
0.01
0.001
0.4 0.5 0.6 0.7 0.8 0.9
1
VSD - Source to Drain Voltage - V
1 000
500
SWITCHING CHARACTERISTICS
VDD = 3 V
VGS(on) = 3 V
tr
200
100
50
tf
td(off)
td(on)
20
10
0.1 0.2
0.5 1
2
ID - Drain Current - A
5 10
4
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