K1960-T2 View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

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K1960-T2

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

NEC => Renesas Technology 

2SK1960

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER

SYMBOL

TEST CONDITIONS

Drain Cut-Off Current

IDSS

VDS = 16 V, VGS = 0

Gate Leakage Current

IGSS

VGS = ±7.0 V, VDS = 0

Gate Cut-Off Voltage

VGS(off)

VDS = 3 V, ID = 1 mA

Forward Transfer Admittance

|yfs|

VDS = 3 V, ID = 1.5 A

Drain to Source On-State Resistance RDS(on)1 VGS = 1.5 V, ID = 0.1 A

Drain to Source On-State Resistance RDS(on)2 VGS = 2.5 V, ID = 1.5 A

Drain to Source On-State Resistance RDS(on)3 VGS = 4.0 V, ID = 1.5 A

Input Capacitance

Ciss

VDS = 3 V, VGS = 0, f = 1.0 MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-ON Delay Time

Rise Time

td(on)

tr

VDD = 3 V, ID = 1.5 A, VGS(on) = 3 V,

RG = 10 Ω, RL = 2 Ω

Turn-OFF Delay Time

td(off)

Fall Time

tf

MIN.

0.5

2.0

TYP.

0.8

0.35

0.17

0.12

370

320

115

70

200

150

200

MAX.

1.0

±3.0

1.1

0.8

0.3

0.2

UNIT

µA

µA

V

S

Ω

Ω

Ω

pF

pF

pF

ns

ns

ns

ns

2

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