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K1960-T1 Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталогеКомпоненты Описаниепроизводитель
K1960-T1 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING NEC
NEC => Renesas Technology NEC
K1960-T1 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1960
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain Cut-Off Current
IDSS
VDS = 16 V, VGS = 0
Gate Leakage Current
IGSS
VGS = ±7.0 V, VDS = 0
Gate Cut-Off Voltage
VGS(off)
VDS = 3 V, ID = 1 mA
Forward Transfer Admittance
|yfs|
VDS = 3 V, ID = 1.5 A
Drain to Source On-State Resistance RDS(on)1 VGS = 1.5 V, ID = 0.1 A
Drain to Source On-State Resistance RDS(on)2 VGS = 2.5 V, ID = 1.5 A
Drain to Source On-State Resistance RDS(on)3 VGS = 4.0 V, ID = 1.5 A
Input Capacitance
Ciss
VDS = 3 V, VGS = 0, f = 1.0 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
Rise Time
td(on)
tr
VDD = 3 V, ID = 1.5 A, VGS(on) = 3 V,
RG = 10 , RL = 2
Turn-OFF Delay Time
td(off)
Fall Time
tf
MIN.
0.5
2.0
TYP.
0.8
0.35
0.17
0.12
370
320
115
70
200
150
200
MAX.
1.0
±3.0
1.1
0.8
0.3
0.2
UNIT
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
2
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