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K1959 Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталогеКомпоненты Описаниепроизводитель
K1959 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING NEC
NEC => Renesas Technology NEC
K1959 Datasheet PDF : 6 Pages
1 2 3 4 5 6
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
30
60
90
120 150
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
2.0
1.6
3.0 V
1.2
2.5 V
0.8
2.0 V
0.4
1.8 V
VGS = 1.5 V
0
0.2
0.4
0.6
0.8
1.0
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = 3 V
3
TA = –25 ˚C
25 ˚C
1
75 ˚C
0.3
0.1
0.01 0.03
0.1
0.3
1
3
ID - Drain Current - A
2SK1959
FORWARD BIAS SAFE OPERATING AREA
10
5
2
PW
1
= 100 ms
0.5
DC
0.2
Single
pulse
0.1
1
2
5
10 20
50
VDS - Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
10
VDS = 3 V
1
TA = 75 ˚C
0.1
25 ˚C
–25 ˚C
0.01
0.001
0
1
2
3
4
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
1
VGS = 1.5 V
0.8
TA = 75 ˚C
25 ˚C
–25 ˚C
0.6
TA = 75 ˚C
0.4
25 ˚C
–25 ˚C
0.2
VGS = 2.5 V
0
0.01 0.03 0.1 0.3
1
3
ID - Drain Current - A
3
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